A compact model for polysilicon TFTs leakage current including the poole-frenkel effectWU, W. J; YAO, R. H; LI, S. H et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 11, pp 2975-2983, issn 0018-9383, 9 p.Article

A new extraction method of poly-Si TFT model parameters in the leakage regionWU, W. J; YAO, R. H; ZHENG, X. R et al.Solid-state electronics. 2007, Vol 51, Num 5, pp 778-783, issn 0038-1101, 6 p.Article

A physical model of floating body effects in polysilicon thin film transistorsWU, W. J; YAO, R. H; CHEN, T et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 930-936, issn 0038-1101, 7 p.Article

An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon filmWU, Z. H; LAI, P. T; BIN LI et al.Solid-state electronics. 2005, Vol 49, Num 1, pp 25-30, issn 0038-1101, 6 p.Article